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VLMW32..
Vishay Semiconductors
Power SMD LED PLCC-4
FEATURES * High efficient INGaN technology * Angle of half intensity = 60 * Available in 8 mm tape e3 * Luminous intensity, color and forward voltage categorized per packing unit * Luminous intensity ratio per packing unit IVmax/IVmin 1.6 * ESD-withstand voltage: up to 1 kV according to JESD22-A114-B * Lead (Pb)-free device * Preconditioning: according to Jedec Level 2a * Compatible with IR-Reflow, vapor phase and wave soldering processes according to CECC 00802 and J-STD-020C * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * Automotive qualified AEC-Q101 APPLICATIONS * Camera flash light * Signal and symbol luminaire * Marker lights * Interior and exterior automotive lighting (brake lights, turn lights, backlighting, side markers) * Indicator lighting
19210_1
DESCRIPTION The VLMW32.. white LED is an advanced product in terms of heat dissipation. The leadframe profile of this PLCC-4 SMD package is optimized to reduce the thermal resistance. This allows higher drive current and doubles the light output compared to Vishay's high intensity SMD LED in PLCC-2 standard package. PRODUCT GROUP AND PACKAGE DATA * Product group: LED * Package: PLCC-4 * Product series: SMD Power * Angle of half intensity: 60 PARTS TABLE
PART VLMW32T2V1-5K8L-08 VLMW32T2V1-5K8L-18 VLMW32U2V2-5K8L-08 VLMW32U2V2-5K8L-18 VLMW32T1V2-5K8L-08 VLMW32T1V2-5K8L-18 VLMW32U2AA-5K8L-08 VLMW32U2AA-5K8L-18 VLMW32V2AB-5K8L-08 VLMW32V2AB-5K8L-18
COLOR, LUMINOUS INTENSITY White, IV = (355 to 900) mcd White, IV = (355 to 900) mcd White, IV = (560 to 1120) mcd White, IV = (560 to 1120) mcd White, IV = (280 to 1120) mcd White, IV = (280 to 1120) mcd White, IV = (560 to 1400) mcd White, IV = (560 to 1400) mcd White, IV = (900 to 1800) mcd White, IV = (900 to 1800) mcd
TECHNOLOGY WAVELENGTH InGaN/TAG on SiC InGaN/TAG on SiC InGaN/TAG on SiC InGaN/TAG on SiC InGaN/TAG on SiC InGaN/TAG on SiC InGaN/TAG on SiC InGaN/TAG on SiC InGaN/TAG on SiC InGaN/TAG on SiC
Document Number 81619 Rev. 1.1, 20-Jul-07
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VLMW32..
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMW32..
PARAMETER Reverse voltage2) DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t 5s mounted on PC board (pad design see page 6) Tamb 65 C tp 10 s TEST CONDITION SYMBOL VR IF IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 30 0.1 127 100 - 40 to + 100 - 40 to + 100 260 270 UNIT V mA A mW C C C C K/W
Note: 1) T amb = 25 C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for a short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMW32.., WHITE
PARAMETER TEST CONDITION PART VLMW32T2V1-5K8L VLMW32U2V2-5K8L Luminous intensity IF = 30 mA VLMW32T1V2-5K8L VLMW32U2AA-5K8L VLMW32V2AB-5K8L VLMW32T2V1-5K8L VLMW32U2V2-5K8L Luminous Flux IF = 30 mA VLMW32T1V2-5K8L VLMW32U2AA-5K8L VLMW32V2AB-5K8L Chromaticity coordinate x, y acc. to CIE 1931 Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of IV IF = 30 mA IF = 30 mA IF = 30 mA IR = 10 A IF = 20 mA IF = 20 mA SYMBOL IV IV IV IV IV V V V V V x y VF VR TCVF TCIV 5 -4 - 0.5 MIN 355 560 280 560 900 1100 1700 860 1736 2790 0.33 0.33 60 3.7 4.2 deg V V mV/K %/K TYP. MAX 900 1120 1120 1400 1800 2800 3500 3500 4340 5580 UNIT mcd mcd mcd mcd mcd mlm mlm mlm mlm mlm
Note: 1) Tamb = 25 C, unless otherwise specified
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Document Number 81619 Rev. 1.1, 20-Jul-07
VLMW32..
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION
GROUP STANDARD T1 T2 U1 U2 V1 V2 AA AB LIGHT INTENSITY (MCD) MIN 280 355 450 560 710 900 1120 1400 MAX 355 450 560 710 900 1120 1400 1800
CROSSING TABLE
VISHAY VLMW32T2V1 VLMW32U2V2 VLMW32T1V2 VLMW32U2AA VLMW32V2AB OSRAM LWE67C-T2V1 LWE67C-U2V2 LWE67C-T1V2 LWE6SC-U2AA LWE6SC-V2AB NICHIA NSCW021T NSCW021T NSCW021T NSCW021T NSCW021T
Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable.
CHROMATICITY COORDINATED GROUPS FOR WHITE SMD LED
X 0.291 5L 0.285 0.307 0.310 0.296 5K 0.291 0.310 0.313 0.310 6L 0.307 0.330 0.330 0.313 6K 0.310 0.330 0.330 Y 0.268 0.279 0.312 0.297 0.259 0.268 0.297 0.284 0.297 0.312 0.347 0.330 0.284 0.297 0.330 0.310 8K 8L 7K 7L X 0.330 0.330 0.347 0.345 0.330 0.330 0.338 0.352 0.345 0.347 0.367 0.364 0.352 0.338 0.364 0.360 Y 0.330 0.347 0.371 0.352 0.310 0.330 0.342 0.344 0.352 0.371 0.401 0.380 0.344 0.342 0.380 0.357
Note: Chromaticity coordinate groups are tested at a current pulse direction of 25 ms and a tolerance of 0.01.
Document Number 81619 Rev. 1.1, 20-Jul-07
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VLMW32..
Vishay Semiconductors
TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified
40
100 IV rel - Relative Luminous Intensity
0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C)
16196
35
I F - Forward Current (mA)
90 80 70 60 50 40 30 20 10 0 400 450 500 550 600 650 700 750 800 - Wavelength (nm)
30 25 20 15 10 5 0
19034_1
Figure 1. Forward Current vs. Ambient Temperature
Figure 4. Relative Intensity vs. Wavelength
10
I Vrel - Relative Luminous Intensity
2.0
I Vrel - Relative Luminous Intensity
1 10 I F - Forward Current (mA) 100
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100
1
0.1
0.01
16194
16197
Tamb - Ambient Temperature (C)
Figure 2. Relative Luminous Intensity vs. Forward Current
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
f - Chromaticitycoordinante shift (x,y)
100 I F - Forward Current (mA)
0.345 white 0.340 X 0.335 0.330 Y 0.325 0.320 0.315
10
1 2.0
19035
2.5
3.0
3.5
4.0
4.5
5.0
16198
0
10
20
30
40
50
60
V F - Forward Voltage (V)
IF - Forward Current (mA)
Figure 3. Forward Current vs. Forward Voltage
Figure 6. Chromaticity Coordinate Shift vs. Forward Current
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Document Number 81619 Rev. 1.1, 20-Jul-07
VLMW32..
Vishay Semiconductors
3.95 3.90 VF - Forward Voltage (V) 3.85 3.80 3.75 3.70 3.65 3.60 3.55 3.50 3.45 0 10 20
16199
0.400
New color grouping white
8L
0.350
8K 7L 7K 6L
Y-par
0.300
5L 5K
6K
0.250
30 40 50 60 70 80 90 100
0.200 0.250 0.270 0.290 0.310 0.330 0.350 0.370
19784_3
T amb - Ambient Temperature (C)
X-par
Figure 7. Forward Voltage vs. Ambient Temperature
Figure 9. White Grouping SMD
VF - Change of Forward Voltage (mV)
0
10
20 30
600 500 400 300 200 100 0 - 100 - 200 - 300 - 50 - 25 0 25 50 75 100 10 mA 20 mA 30 mA
IV rel - Relative Luminous Intensity
40 1.0 0.9 0.8 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
0.7
95 10319
19036
Tamb - Ambient Temperature (C)
Figure 8. Rel. Luminous Intensity vs. Angular Displacement
Figure 10. Change of Forward Voltage vs. Ambient Temperature
TAPING Dimensions in millimeters
Anode Cathode
3.5 3.1 2.2 2.0
5.75 5.25 3.6 3.4 8.3 7.7
4.0 3.6
Cathode
1.85 1.65 1.6 1.4 4.1 3.9 2.05 1.95
18596
4.1 3.9
0.25
Document Number 81619 Rev. 1.1, 20-Jul-07
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VLMW32..
Vishay Semiconductors
RECOMMENDED PAD DESIGN Dimensions in millimeters (Wave-Soldering), RthJA = 270 K/W
16260
RECOMMENDED PAD DESIGN Dimensions in millimeters (Reflow-Soldering), RthJA = 270 K/W
16261
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Document Number 81619 Rev. 1.1, 20-Jul-07
VLMW32..
Vishay Semiconductors
OPTIONAL PAD DESIGN Dimensions in millimeters (Wave-Soldering), RthJA = 290 K/W
16262
OPTIONAL PAD DESIGN Dimensions in millimeters (Reflow-Soldering), RthJA = 290 K/W
16263
Document Number 81619 Rev. 1.1, 20-Jul-07
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VLMW32..
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout 1.2 area covered with solder resist
2.6 (2.8)
4 1.6 (1.9)
20541
METHOD OF TAPING/POLARITY AND TAPE AND SMD LED (VLM.3 - SERIES) Vishay's LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape.
REEL REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.)
120 10.0 9.0
4
4.5 3.5 2.5 1.5
13.00 12.75 63.5 60.5
Adhesive Tape
Identification Label: Vishay Type Group Tape Code Production Code Quantity
Blister Tape
180 178
14.4 max.
94 8665
Figure 12. Reel dimensions - GS08
Component Cavity
94 8670
TAPING OF VLM.3...
3.5 3.1 2.2 2.0
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERED
120 10.4 8.4
5.75 5.25 3.6 3.4
1.85 1.65
4.0 3.6 8.3 7.7
Identification Label: Vishay Type Group Tape Code Production Code Quantity
4.5 3.5 2.5 1.5
13.00 12.75 62.5 60.0
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
0.25
94 8668
321 329
14.4 max.
18857
Figure 11. Tape dimensions in mm for PLCC-x
Figure 13. Reel dimensions - GS18
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Document Number 81619 Rev. 1.1, 20-Jul-07
VLMW32..
Vishay Semiconductors
SOLDERING PROFILE
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
BARCODE-PRODUCT-LABEL EXAMPLE:
300 250 200 T[C]
max. 30 s 255 C 255C 240 C 217 C max. 260 C 245 C
106
A H
150
max. 120 s max. 100 s
37
100 50 0 0
19470-3 max. Ramp Up 3 C/s max. Ramp Down 6 C/s
B
50 100 150 t [s]
max. 2 cycles allowed
C
D
E
F
G
19795
200
250
300
Figure 14. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020C)
TTW Soldering 300 250 Temperature (C) 200 150 100 50 0 0 50 235 C...260 C first wave ca. 200 K/s 100 C...130 C 5s
(acc. to CECC00802)
948626-1
Lead Temperature second wave ca. 2 K/s full line: typical dotted line: process limits
A) Type of component B) Manufacturing plant C) SEL - Selection Code (Bin): e.g.: V1 = Code for Luminous Intensity Group 5L = Code for Chrom. Coordinate Group D) Date Code year/week E) Day Code (e. g. 1: Monday) F) Batch No. G) Total quantity H) Company code
2 K/s forced cooling 100 Time (s) 150
ca. 5 K/s
200
250
Figure 15. Double wave soldering of opto devices (all packages)
Document Number 81619 Rev. 1.1, 20-Jul-07
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VLMW32..
Vishay Semiconductors
DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
LEVEL This bag contains MOISTURE -SENSITIVE DEVICES
CAUTION
2a
1. Shelf life in sealed bag 12 months at <40C and < 90% relative humidity (RH) 2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 260C) must be: a) Mounted within 672 hours at factory condition of < 30C/60%RH or b) Stored at <10% RH. 3. Devices require baking before mounting if: a) Humidity Indicator Card is >10% when read at 23C + 5C or b) 2a or 2b is not met. 4. If baking is required, devices may be baked for: 192 hours at 40C + 5C/-0C and <5%RH (dry air/nitrogen) or o or 96 hours at 605 Cand <5%RH For all device containers 24 hours at 1005C Not suitable for reels or tubes
Aluminum bag
Label
Reel
15973
Bag Seal Date: ______________________________ (If blank, see bar code label) Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
Example of JESD22-A112 Level 2a label ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging.
FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: * Storage temperature 10 C to 30 C * Storage humidity 60 % RH max. After more than 672 hours under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 C + 5 C/- 0 C and < 5 % RH (dry air/nitrogen) or 96 hours at 60 C + 5 C and < 5 % RH for all device containers or 24 hours at 100 C + 5 C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 2a label is included on all dry bags.
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Document Number 81619 Rev. 1.1, 20-Jul-07
VLMW32..
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81619 Rev. 1.1, 20-Jul-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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